Data

Data for "Thermal Processes and their Impact on Surface Related Degradation"

University of New South Wales
Hamer, Phillip ; Chen, Daniel ; Bonilla, Ruy S
Viewed: [[ro.stat.viewed]] Cited: [[ro.stat.cited]] Accessed: [[ro.stat.accessed]]
ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Adc&rfr_id=info%3Asid%2FANDS&rft_id=info:doi10.26190/p2xp-6x55&rft.title=Data for "Thermal Processes and their Impact on Surface Related Degradation"&rft.identifier=https://doi.org/10.26190/p2xp-6x55&rft.publisher=UNSW&rft.description=Photoconductance carrier lifetime measurements for the paper Thermal Processes and their Impact on Surface Related Degradation published in physica status solidi - rapid research letters Methodology 156×156 mm 1.6 Ω.cm boron doped p-type Czochralski silicon wafers were used. The wafers were textured in a KOH/IPA solution to remove saw damage and texture both surfaces. They were then given an RCA2 clean followed by a HF dip to remove any native oxide before dielectric deposition.All dielectric depositions were carried out in a Meyer Burger MAiA remote PECVD tool. Half of the wafers (Groups 1,2,5) were coated with SiNX:H at a set point of 400oC, with a target thickness of 75 nm and refactive index (RI) of 2.08. The other wafers (Groups 3,4,6) were coated with an AlOX:H/SiNX:H stack. The AlOX:H layer was deposited at a set point of 400oC with a target thickness of 24 nm and RI of 1.588, while the SiNX:H layer was deposited at a set point of 350oC with a target thickness of 80 nm and RI of 2.08. The dielectric deposition parameters match those used in a previous study, which demonstrated no significant SRD without firing.[18]All wafers were fired in a Meyer Burger Camini belt firing furnace with a peak firing set temperature of 855oC. The dielectric layers of wafers from Groups 2,3,5 and 6 were then stripped in a HF solution. Groups 2 and 3 were then re-coated with a SiNX:H layer, while groups 5 and 6 had a fresh AlOX:H/SiNX:H stack deposited. In both cases deposition parameters were identical to those used initially.Wafers were then laser cleaved into 52×52 mm lifetime samples for annealing and light soaking. A hotplate was used to anneal samples from each group at temperatures of 300, 350 and 400oC for 5 or 30 minutes in the dark. Annealed and non-annealed samples were then light soaked in a GSola GCD-4 LID Test chamber at 150oC under 1 sun equivalent illumination.The injection dependent effective carrier lifetime was measured ex-situ throughout light soaking using a Sinton Instruments WCT-120 lifetime tester. MThe measurements were taken with the 1/1 flash and analysed using the generalized method.[25] In order to allow a reasonable comparison between structures with differing initial lifetimes the concept of lifetime equivalent defect density (∆N_leq), also known as normalized defect density,[26] is used:∆N_leq=1/τ_eff -1/τ_(eff.initial)In this work τ_(eff.initial) is taken to be the highest effective lifetime measured either before or during light soaking. In the case of samples passivated with SiNX:H this occurred within the first 2 hours of light soaking, whereas for samples passivated with AlOX:H/SiNX:H stacks the situation was more complicated. Because SRD has the greatest effect on effective lifetime at high injection levels, and to avoid trapping effects, ∆N_leq was calculated at a minority carrier density (MCD) of 1×1016 cm-3 in this work.&rft.creator=Hamer, Phillip &rft.creator=Chen, Daniel &rft.creator=Bonilla, Ruy S &rft.date=2021&rft_rights=UNSW, 2021&rft_rights=Creative Commons CC-BY&rft_subject=Silicon&rft_subject=Photovoltaics&rft_subject=Degradation&rft_subject=Surface Passivation&rft_subject=Defect Engineering&rft_subject=Photodetectors, Optical Sensors and Solar Cells&rft_subject=ENGINEERING&rft_subject=ELECTRICAL AND ELECTRONIC ENGINEERING&rft.type=dataset&rft.language=English Access the data

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UNSW, 2021

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School of Photovoltaic and Renewable Energy Engineering, Faculty of Engineering, UNSW

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Photoconductance carrier lifetime measurements for the paper "Thermal Processes and their Impact on Surface Related Degradation" published in physica status solidi - rapid research letters

Methodology

156×156 mm 1.6 Ω.cm boron doped p-type Czochralski silicon wafers were used. The wafers were textured in a KOH/IPA solution to remove saw damage and texture both surfaces. They were then given an RCA2 clean followed by a HF dip to remove any native oxide before dielectric deposition.All dielectric depositions were carried out in a Meyer Burger MAiA remote PECVD tool. Half of the wafers (Groups 1,2,5) were coated with SiNX:H at a set point of 400oC, with a target thickness of 75 nm and refactive index (RI) of 2.08. The other wafers (Groups 3,4,6) were coated with an AlOX:H/SiNX:H stack. The AlOX:H layer was deposited at a set point of 400oC with a target thickness of 24 nm and RI of 1.588, while the SiNX:H layer was deposited at a set point of 350oC with a target thickness of 80 nm and RI of 2.08. The dielectric deposition parameters match those used in a previous study, which demonstrated no significant SRD without firing.[18]All wafers were fired in a Meyer Burger Camini belt firing furnace with a peak firing set temperature of 855oC. The dielectric layers of wafers from Groups 2,3,5 and 6 were then stripped in a HF solution. Groups 2 and 3 were then re-coated with a SiNX:H layer, while groups 5 and 6 had a fresh AlOX:H/SiNX:H stack deposited. In both cases deposition parameters were identical to those used initially.Wafers were then laser cleaved into 52×52 mm lifetime samples for annealing and light soaking. A hotplate was used to anneal samples from each group at temperatures of 300, 350 and 400oC for 5 or 30 minutes in the dark. Annealed and non-annealed samples were then light soaked in a GSola GCD-4 LID Test chamber at 150oC under 1 sun equivalent illumination.The injection dependent effective carrier lifetime was measured ex-situ throughout light soaking using a Sinton Instruments WCT-120 lifetime tester. MThe measurements were taken with the 1/1 flash and analysed using the generalized method.[25] In order to allow a reasonable comparison between structures with differing initial lifetimes the concept of lifetime equivalent defect density (∆N_leq), also known as normalized defect density,[26] is used:∆N_leq=1/τ_eff -1/τ_(eff.initial)In this work τ_(eff.initial) is taken to be the highest effective lifetime measured either before or during light soaking. In the case of samples passivated with SiNX:H this occurred within the first 2 hours of light soaking, whereas for samples passivated with AlOX:H/SiNX:H stacks the situation was more complicated. Because SRD has the greatest effect on effective lifetime at high injection levels, and to avoid trapping effects, ∆N_leq was calculated at a minority carrier density (MCD) of 1×1016 cm-3 in this work.

Valid: 31 10 2026

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